Igbts Insulated Gate Bipolar Transistors

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Igbts Insulated Gate Bipolar Transistors

Certification:	RoHS, ISO
Shape:	ST
Shielding Type:	Sharp Cutoff Shielding Tube

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Product Description

📋 Basic Information

Model NO.

OST40N120HMF TO-247N

Cooling Method

Air Cooled Tube

Function

Microwave Transistor

Working Frequency

High Frequency

Structure

Planar

Encapsulation

Chip Transistor

Power Level

High Power

Material

Silicon

Capacity

Over 1kk/Month

🔍 Product Description

General Description: OST40N120HMF uses advanced patented Trident-Gate Bipolar Transistor (TGBT™) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

🚀 Features

Advanced TGBT™ technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode

🛠️ Applications

Induction converters
Uninterruptible power supplies

📊 Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	1200	V
Maximum junction temperature	175	°C
IC, pulse	160	A
VCE(sat), typ @ VGE=15V	1.45	V
Qg	214	nC

⚠️ Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	1200	V
Gate emitter voltage	VGES	±20	V
Continuous collector current (Tc=25ºC)	IC	56	A
Continuous collector current (Tc=100ºC)	IC	40	A
Pulsed collector current (Tc=25ºC)	IC, pulse	160	A
Power dissipation (Tc=25ºC)	PD	357	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

🌡️ Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.42	°C/W
Diode thermal resistance, junction-case	RθJC	0.75	°C/W
Thermal resistance, junction-ambient	RθJA	40	°C/W

📦 Supply Chain & Green Product Declaration

🛒 Ordering & Packaging

Package Type	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Boxes/Carton	Units/Carton
TO247-P	30	11	330	6	1980

Legal Disclaimer: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, the manufacturer hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Frequently Asked Questions

What technology is used in the OST40N120HMF?

It utilizes advanced patented Trident-Gate Bipolar Transistor (TGBT™) technology, which ensures extremely low saturation voltage and excellent switching performance.

What are the primary applications for this transistor?

This device is ideally suited for induction converters and uninterruptible power supplies (UPS), specifically for mid to high range switching frequencies.

What is the maximum operating temperature?

The OST40N120HMF is designed to operate with a maximum junction temperature of up to 175°C.

What is the pulsed collector current rating?

The device can handle a pulsed collector current (Ic, pulse) of up to 160A at Tc=25°C.

Is the product compliant with environmental standards?

Yes, the OST40N120HMF is Pb-free, RoHS compliant, and Halogen-free, meeting modern green product standards.

How is the product packaged for bulk shipping?

The standard packaging includes 30 units per tube, with 1980 units per master carton box.