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Winwon Chips
100V Dual N-Channel Enhancement Mode Power MOSFET
The WMB02DN10T1 utilizes advanced power trench technology specifically tailored to minimize on-state resistance while maintaining superior switching performance.
Key Features:
Primary Applications:
| Package | PDFN5*6-8L |
| VDS(V) | 100 |
| Vgs Max(V) | ±20 |
| ID(A)@TA=25ºC(Max.) | 2.5 |
| VGS(th)(V)(Typ.) | 1.5 |
| Rds(on)(mΩ)@Vgs=10V(Max.) | 290 |
| Rds(on)(mΩ)@Vgs=4.5V(Max.) | 310 |




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